DocumentCode
1867620
Title
Thermally robust 90 nm node Cu-Al wiring technology using solid phase reaction between Cu and Al
Author
Matsubara, Y. ; Komuro, M. ; Onodera, T. ; Ikarashi, N. ; Hayashi, Y. ; Sekine, M.
Author_Institution
Adv. Technol. Dev. Div., NEC Electron. Corp., Kanagawa, Japan
fYear
2003
fDate
10-12 June 2003
Firstpage
127
Lastpage
128
Abstract
This paper describes a thermally robust and low cost Cu-Al wiring technology using solid phase reaction between ECD Cu and PVD Al. No significant sheet resistance and uniformity change has been obtained with precise Al concentration control. This technology dramatically improves reliable performance for stress induced voiding (SIV) as well as electro-migration (EM) and the most promising candidate for SIV free 90 nm Cu-Al process with lower cost.
Keywords
aluminium alloys; copper alloys; electrodeposits; electromigration; metallic thin films; reliability; stress effects; vapour deposited coatings; voids (solid); wiring; 90 nm; Al concentration control; CuAl; PVD; electrochemical deposition; electromigration; low cost CuAl wiring technology; reliability; solid phase reaction; stress; thermally robust technology; voids; Artificial intelligence; Copper alloys; Costs; Robustness; Solids; Stress; Temperature; Testing; Tin; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221118
Filename
1221118
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