800 MHz-band low noise low distortion Si-MMIC front-end using BJT/MOSFET LNA and MOSFET mixer

Author

Suematsu, N. ; Ono, M. ; Sugiyama, S. ; Kubo, S. ; Uesugi, M. ; Hasegawa, K. ; Hiroshige, K. ; Iyama, Y. ; Ishida, O.

Author_Institution

Inf. Technol. R&D Centre, Mitsubishi Electr. Corp., Kanagawa, Japan

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

689

Abstract

Both low noise and low distortion characteristics are strongly desired for cellular terminal receiver application. In the case of Si-MMIC, BJT has superior feature in its low noise performance and MOSFET has it in low distortion performance. By using BJT amplifier as the 1st stage of LNA and MOSFET as the 2nd stage of LNA and a down mixer, both low noise and low distortion performance is achieved. The fabricated Si-MMIC front-end, which contains two-stage LNA and down mixer and LO amplifier, performs 3.7 dB NF, 16.7 dB conversion gain and -15.5 dBm IIP/sub 3/ with 3V/13.7 mA d.c. power and -10 dBm LO power.

Keywords

BiCMOS analogue integrated circuits; MMIC amplifiers; MMIC mixers; UHF amplifiers; UHF integrated circuits; UHF mixers; cellular radio; electric distortion; elemental semiconductors; integrated circuit noise; land mobile radio; radio receivers; silicon; 13.7 mA; 16.7 dB; 3 V; 3.7 dB; 800 MHz; BJT first-stage; BJT/MOSFET LNA; BiCMOS process; LO amplifier; MOSFET mixer; MOSFET second-stage; Si; Si MMIC front-end; UHF; cellular terminal receiver application; down mixer; low distortion front-end; low noise low front-end; two-stage LNA; Band pass filters; BiCMOS integrated circuits; Frequency measurement; Gain measurement; MMICs; MOSFET circuits; Noise measurement; Performance gain; Power supplies; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705085

Filename

705085