Energy distribution of interface traps in high-k gated MOSFETs

Author

Han, J.-P. ; Vogel, E.M. ; Gusev, E.P. ; D´Emic, C. ; Richter, C.A. ; Heh, D.W. ; Suehle, J.S.

Author_Institution

Div. of Semicond. Electron., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2003

fDate

10-12 June 2003

Firstpage

161

Lastpage

162

Abstract

We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO/sub 2/ gated nMOSFETs. Our results have revealed that the Dit is much higher in the upper half of the bandgap than that in the lower half of the bandgap. These results are consistent with the observation that n-channel mobilities are more severely degraded than p-channel mobilities when compared to conventional MOSFET´s with SiO/sub 2/ as the gate dielectric. The results were verified by capacitance-voltage (C-V) and ac conductance techniques.

Keywords

MOSFET; carrier mobility; dielectric materials; energy gap; hafnium compounds; interface states; semiconductor device measurement; HfO/sub 2/; ac conductance measurement; bandgap; capacitance-voltage measurement; charge pumping; electrons capture; gate dielectrics; high-k gate MOSFET; holes capture cross section; interface trap density; n-channel mobilities; p-channel mobilities; Capacitance-voltage characteristics; Charge carrier processes; Charge pumps; Electron traps; Energy capture; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221135

Filename

1221135