21.5 dBm power-handling 5 GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with Depletion-layer-Extended Transistors (DETs)

Author

Ohnakado, T. ; Yamakawa, S. ; Murakami, T. ; Furukawa, A. ; Taniguchi, E. ; Ueda, H. ; Suematsu, N. ; Oomori, T.

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2003

fDate

12-14 June 2003

Firstpage

25

Lastpage

28

Abstract

This paper reports for the first time an over-20 dBm power-handling 5 GHz transmit/receive (T/R) CMOS switch. The Depletion-layer-Extended Transistor (DET), which possesses high effective substrate resistance, enables the voltage division effect of the stacked transistor configuration to work in CMOS, thus realizing this high power-handling capability. Furthermore, despite insertion-loss (I/sub L/) degradation due to double on-resistance with the stacked transistor configuration, a receive-mode I/sub L/ (I/sub L/@RX) of as low as 1.44 dB at 5 GHz is accomplished with the benefit of the I/sub L/ improvement effects in the DET, in addition to a very low transmit-mode I/sub L/ (I/sub L/@TX) of 0.95 dB at 5 GHz.

Keywords

CMOS integrated circuits; electrical resistivity; elemental semiconductors; field effect transistor switches; silicon; 0.95 dB; 1.44 dB; 5 GHz; Si; depletion-layer-extended transistors; power-handling; stacked transistor configuration; substrate resistance; transmit/receive CMOS switch; CMOS process; Circuits; Dielectrics; FETs; Gallium arsenide; Radio frequency; Research and development; Switches; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-034-8

Type

conf

DOI

10.1109/VLSIC.2003.1221152

Filename

1221152