• DocumentCode
    1869381
  • Title

    A novel access scheme suppressing disturbance for a cross-point type ferroelectric memory

  • Author

    Sakai, N. ; Ishizuka, Y. ; Matsushita, S. ; Takano, Y. ; Ogasawara, S. ; Honma, K. ; Geshi, T. ; Inoue, Y. ; Fukase, K.

  • Author_Institution
    Mater. & Devices Dev. Center, Sanyo Electr. Co. Ltd., Gifu, Japan
  • fYear
    2003
  • fDate
    12-14 June 2003
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    To resolve the disturbance problem of stored data being destroyed in a cross-point type FeRAM, which has prevented it from being put into practical use, we propose a novel access scheme for read-restore sequence. The unique point of this scheme is two restore sequences that are dynamically changed according to read-out data. Based on this scheme, the reduction of polarization induced by the disturbance is suppressed to be less than 17% after stress iteration of 10/sup 9/ times.
  • Keywords
    dielectric polarisation; ferroelectric storage; random-access storage; RAM; cross-point type ferroelectric memory; ferroelectric polarization; read-out data; read-restore sequence; Capacitors; Degradation; Ferroelectric films; Ferroelectric materials; Low voltage; Nonvolatile memory; Polarization; Random access memory; Silicon; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    4-89114-034-8
  • Type

    conf

  • DOI
    10.1109/VLSIC.2003.1221192
  • Filename
    1221192