High frequency microwave on-chip inductors using increased ferromagnetic resonance frequency of magnetic films

Author

Koh, Kisik ; Gardner, Donald S. ; Chen Yang ; O´brien, Kevin P. ; Tayebi, Noureddine ; Liwei Lin

Author_Institution

Univ. of California, Berkeley, Berkeley, CA, USA

fYear

2015

fDate

18-22 Jan. 2015

Firstpage

208

Lastpage

211

Abstract

The fabrication and characterization of high frequency on-chip inductors using sputtered magnetic films with an improved frequency range is presented. Reducing the sputtering power in the deposition process was found to result in smoother film surfaces and stronger uniaxial magnetic anisotropy and increased the FMR of CoZrTaB from 1.48 GHz to 2.13 GHz. A magnetic-core, on-chip inductor was fabricated using the CoZrTaB films. Results have shown 150% higher inductance and a larger Q-factor up to 1.2 GHz as compared to an air-core inductor.

Keywords

Q-factor; UHF devices; cobalt compounds; ferromagnetic resonance; inductors; magnetic anisotropy; magnetic cores; magnetic thin films; tantalum compounds; zirconium compounds; CoZrTaB; FMR; Q-factor; air-core inductor; deposition process; film surfaces; frequency 1.48 GHz to 2.13 GHz; high-frequency microwave on-chip inductor characterization; high-frequency microwave on-chip inductor fabrication; improved frequency range; increased ferromagnetic resonance frequency; magnetic films; magnetic-core; sputtered magnetic films; sputtering power reduction; uniaxial magnetic anisotropy; Inductors; Magnetic anisotropy; Magnetic fields; Magnetic films; Magnetic resonance; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on

Conference_Location

Estoril

Type

conf

DOI

10.1109/MEMSYS.2015.7050923

Filename

7050923