Ultrafast dynamics in InAs/GaAs quantum dot amplifiers

Author

Borri, P. ; Langbein, W. ; Hvam, J.M. ; Mao, M.-H. ; Heinrichsdorff, F. ; Bimberg, D.

Author_Institution

Mikroelektronik Centret, Tech. Univ., Lyngby, Denmark

fYear

1999

fDate

28-28 May 1999

Firstpage

321

Lastpage

322

Abstract

Summary form only given. Semiconductor lasers with an active medium containing zero-dimensional structures are expected to show superior performance, like high material gain and low threshold current. In this work we have measured the transmission properties and the carrier dynamics of InAs/GaAs QD amplifiers at room temperature. The samples consist of 3 stacked layers of InAs/InGaAs/GaAs quantum dots.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light transmission; quantum well lasers; semiconductor quantum dots; time resolved spectra; 20 C; InAs-InGaAs-GaAs; InAs/GaAs QD amplifiers; InAs/GaAs quantum dot amplifiers; InAs/InGaAs/GaAs quantum dots; active medium; carrier dynamics; high material gain; low threshold current; room temperature; semiconductor lasers; transmission properties; ultrafast dynamics; zero-dimensional structures; Gallium arsenide; Indium gallium arsenide; Optical materials; Performance gain; Quantum dot lasers; Quantum dots; Semiconductor lasers; Semiconductor materials; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834251

Filename

834251