Pulsed-plasma deposition of amorphous diamond-like carbon films on copper

Summary form only given. Using the new pulsed-plasma source ion implantation (PSII) as an alternate implantation technique for diamond growth by the carbon-implantation-out-diffusion (CIOD) method allows us to investigate the effect of a higher C ion flux, which is suspected to be the main factor leading to diamond formation in copper. Single crystal and polycrystalline copper disk samples were dc-biased at negative voltages ranging from 0-30 V and exposed to a pulsed or dc methane (pure or 1% CH/sub 4/ in H/sub 2/) plasma. The copper substrate temperature is kept at either 800-1000/spl deg/C or at ambient temperature during plasma exposure. The resulting films are examined by Raman spectroscopy, XPS, and SEM. Preliminary results show only growth of graphitic and diamondlike carbon films on copper substrates negatively dc-biased at 0-10 kV and kept at 800-950/spl deg/C during exposure to 1% CH/sub 4//H/sub 2/ dc plasma.