Justification and Monte Carlo simulation of microstructure evolution process of conductive filament in reset transition in Cu/HfO2/Pt RRAM

Author

Meiyun Zhang ; Shibing Long ; Guoming Wang ; Xiaoxin Xu ; Yang Li ; Qi Liu ; Hangbing Lv ; Haitao Sun ; Ming Liu

Author_Institution

Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

539

Lastpage

542

Abstract

We proposed a new statistical evaluation method to justify the microstructure evolution process of conductive filament (CF) in the reset operation of resistive switching memory (RRAM) according to the dependence of the Weibull slope of reset parameters on the CF size. We demonstrated that in Cu/HfO₂/Pt device the CF can be controlled to be ruptured abruptly, which is more advantageous to the reliable operation of RRAM since the intermediate states are avoided. A Monte Carlo (MC) simulator based on the thermal dissolution model is conducted to further prove our experimental results.

Keywords

Monte Carlo methods; Weibull distribution; copper; hafnium compounds; platinum; resistive RAM; Cu-HfO₂-Pt; Monte Carlo simulation; RRAM; Weibull slope; conductive filament; microstructure evolution process; reset parameters; reset transition; resistive switching memory; statistical evaluation; thermal dissolution; Hafnium compounds; Microelectronics; Microstructure; Monte Carlo methods; Resistance; Switches; Weibull distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224453

Filename

7224453