Improving the resistive switching reliability via controlling the resistance states of RRAM

Author

Yang Li ; Shibing Long ; Meiyun Zhang ; Guoming Wang ; Yan Wang ; Xiaoxin Xu ; Dinglin Xu ; Hangbing Lv ; Qi Liu ; Ming Liu

Author_Institution

Key Lab. of Microelectron. Devices & Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

552

Lastpage

555

Abstract

The variation of switching parameters in RRAM is impacted by the resistance states through a statistical analysis. We proposed some improved program/erase (P/E) methods to precisely control the fluctuation of the resistance states. In DC P/E operation, combing current-sweep-induced gradual SET and voltage-sweep-induced gradual RESET, uniform resistance states can be achieved. In pulse P/E operation, width/height-adjusting method was proposed to control the resistance value after switching. After using this new method, the variance of the R_ON and R_OFF has decreased by 40% and 81%, respectively, and the resistive switching endurance has increased from 10³ cycles to more than 10⁶ cycles.

Keywords

circuit reliability; electric resistance; resistive RAM; statistical analysis; P-E methods; RRAM; combing current-sweep-induced gradual SET; program-erase methods; resistance states; resistive switching endurance; resistive switching reliability; statistical analysis; switching parameters; voltage-sweep-induced gradual RESET; width-height-adjusting method; Films; Hafnium compounds; Microelectronics; Resistance; Standards; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224456

Filename

7224456