DocumentCode
1870864
Title
Open faults in BiCMOS gates
Author
Ma, Siyad C. ; McCluskey, Edward J.
Author_Institution
Center for Reliable Comput., Stanford Univ., CA, USA
fYear
1994
fDate
25-28 Apr 1994
Firstpage
434
Lastpage
439
Abstract
Opens in different BiCMOS structures are analyzed here. It is shown that some opens cannot be detected by stuck-fault tests, since some transistors in BiCMOS gates do not affect the logical function of the gate. It is also shown that, in BiCMOS circuits, an open defect in a particular transistor can cause an acceleration in the wearout of another non-defective transistor
Keywords
BiCMOS integrated circuits; circuit analysis computing; fault location; integrated circuit testing; integrated logic circuits; logic gates; logic testing; BiCMOS gates; SPICE; open defect; simulation; transistor open fault; BiCMOS integrated circuits; Bipolar transistor circuits; Bipolar transistors; Circuit faults; Circuit testing; Delay; Failure analysis; Laboratories; MOSFETs; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium, 1994. Proceedings., 12th IEEE
Conference_Location
Cherry Hill, NJ
Print_ISBN
0-8186-5440-6
Type
conf
DOI
10.1109/VTEST.1994.292277
Filename
292277
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