45 nm SOI and Beyond - Getting to a General Purpose Technology

Author

Iyer, Subramanian S. ; Nowak, Edward J.

Author_Institution

IBM Corp., Hopewell Junction, NY

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

SOI technology has taken power/performance benefits of CMOS beyond those of bulk-CMOS technology in the arena of high-performance applications, including 4.7 GHz dual core Power 6 IC, PowerPC, and game processors. At the 45 nm node we have expanded the menu of devices offered in SOI technology to include general purpose applications, including ASICs and low power products. A spectrum of memory solutions, including high-performance SRAM, high-density SRAM, and very high-density/low-power embedded DRAM provide great flexibility.

Keywords

DRAM chips; SRAM chips; application specific integrated circuits; integrated circuit technology; nanoelectronics; silicon-on-insulator; ASIC; PowerPC; SOI technology; Si-SiO₂; dual core Power 6 IC; frequency 4.7 GHz; game processors; high-performance SRAM; low power products; low-power embedded DRAM; size 45 nm; Application specific integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Conference proceedings; Performance gain; Random access memory; Space technology; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357826

Filename

4357826