The PSII-IM device

Author

Zhengkui Shang

Author_Institution

Southwestern Inst. of Phys., Chengdu, China

fYear

1997

fDate

19-22 May 1997

Firstpage

213

Abstract

Summary form only given, as follows. A new PSII device (PSII-IM) has been set up for development of industrial application at the Southwestern Institute of Physics (SWIP). The vacuum chamber is made of stainless steel with 1000 mm diameter and 1070 mm height surrounded by multicusp permanent magnets. The device is equipped with a cryogenic, a diffusion and a mechanical pump. The background pressure is less than 8/spl times/10/sup -5/ Pa. The plasma can be generated by multifilament discharge or RF discharge in gas. In addition, there are four metal plasma sources, six sputtering targets, cold and hot target supports. The PSII-IBED experiments are carried out on the device. The pulsed negative high voltage is 10-90 kV, the repeated frequency is 10-500 Hz. Generally, plasma density (gas) is 10/sup 8/-10/sup 10/ cm/sup -3/, metal plasma density is 10/sup 8/-10/sup 10/ cm/sup -3/ deposition rate is 0.1/spl sim/1.0 nm/s.

Keywords

high-frequency discharges; ion implantation; plasma applications; plasma density; 10 to 90 kV; 8E-5 Pa; PSII-IM device; RF discharge; cryogenic pump; deposition rate; diffusion pump; industrial application; mechanical pump; metal plasma density; metal plasma sources; multicusp permanent magnets; multifilament discharge; plasma density; plasma source ion implantation; sputtering targets; stainless steel; vacuum chamber; Cryogenics; Fault location; Permanent magnets; Physics; Plasma density; Plasma devices; Plasma sources; Radio frequency; Sputtering; Steel;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1997. IEEE Conference Record - Abstracts., 1997 IEEE International Conference on

Conference_Location

San Diego, CA, USA

ISSN

0730-9244

Print_ISBN

0-7803-3990-8

Type

conf

DOI

10.1109/PLASMA.1997.604895

Filename

604895