Mid-infrared laser diode active region based on type-II broken gap quantum wells

Author

Olesberg, J.T. ; Flatte, M.E. ; Day, P.S. ; Shaw, E.M. ; Magarrell, D.J. ; Zhang, L. ; Anson, S.A. ; Hasenberg, T.C. ; Boggess, T.F. ; Grein, C.H.

Author_Institution

Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USA

fYear

1999

fDate

28-28 May 1999

Firstpage

368

Abstract

Summary form only given. We describe a mid-infrared laser diode active region based on type-II GaInSb/InAs quantum wells. The structure is designed for efficient electrical injection from the barriers. The band structure has been engineered to minimize the deleterious effects prevalent in mid-infrared materials, such as Auger recombination and intersubband absorption.

Keywords

Auger effect; III-V semiconductors; band structure; electron-hole recombination; gallium compounds; indium compounds; laser beams; quantum well lasers; Auger recombination; GaInSb-InAs; GaInSb/InAs quantum well; band structure; deleterious effects; electrical injection; intersubband absorption; laser active region; laser diode active region; mid-infrared laser; mid-infrared laser diode; mid-infrared materials; type-II broken gap quantum wells; type-II quantum wells; Current density; Density measurement; Diode lasers; Optical materials; Optical pulses; Quantum well lasers; Radiative recombination; Superlattices; Temperature distribution; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834317

Filename

834317