Modeling and Implementation of Subthreshold Characteristics of Accumulation-Mode MOSFETs for Various SOI Layer Thickness and Impurity Concentrations

Author

Kuroda, R. ; Teramoto, A. ; Cheng, W. ; Sugawa, S. ; Ohmi, T.

Author_Institution

Graduate Sch. of Eng., Tohoku Univ., Sendai

fYear

2007

fDate

1-4 Oct. 2007

Firstpage

55

Lastpage

56

Abstract

This work reports on the modeling of the unique subthreshold characteristics of the AM-MOSFETs and the implementation to the device to control the subthreshold characteristics and electrical stress immunity. Subthreshold characteristics degradation due to hot carrier stress can be significantly suppressed by tuning the device to the bulk current controlled device. Moreover, scalability of the accumulation-mode MOSFETs becomes comparable to inversion- and intrinsic-mode MOSFETs for ultra-thin T_SOI even for the deep sub-100 nm regime.

Keywords

MOSFET; accumulation layers; hot carriers; semiconductor device models; silicon-on-insulator; SOI layer thickness; SiO₂-Si; accumulation-mode MOSFET; bulk current controlled device; electrical stress immunity; hot carrier stress; impurity concentration; subthreshold characteristics; Conference proceedings; Degradation; Equations; Hot carriers; Impurities; Interface states; MOSFETs; Scalability; Silicon; Stress control;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2007 IEEE International

Conference_Location

Indian Wells, CA

ISSN

1078-621X

Print_ISBN

978-1-4244-0879-5

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2007.4357849

Filename

4357849