Development of a 0.18-μm CMOS single-chip dual-band receiver for UWB applications

Author

Chirala, M. ; Huynh, C. ; Nguyen, C.

Author_Institution

Z-Commun., Inc., San Jose, CA, USA

fYear

2010

fDate

11-17 July 2010

Firstpage

1

Lastpage

4

Abstract

A new receiver front-end operating over the 3.1-4.8 and 6.3-7.9 GHz dual-band in the ultra-wideband (UWB) spectrum (3.1-10.6 GHz) was developed using a 0.18-μm CMOS process. The receiver front-end has a chip size of only 1.18 × 0.87 mm² and exhibits conversion gains of 12.5-16.5 dB and 14.5-16 dB over the 3.1-4.8 GHz and 6.3-7.9 GHz bands, respectively. The measured input 1-dB compression points are -4.1 and -5.2 dBm at 4 and 6.5 GHz, respectively. The measured noise figure is from 7.5 to 12.5 dB across 3.1-7.9 GHz and less than 10 dB up to 7 GHz. The receiver front-end consumes about 42 mA of current from a 1.8 V power supply.

Keywords

CMOS integrated circuits; radio receivers; ultra wideband communication; CMOS single-chip dual-band receiver; UWB applications; frequency 3.1 GHz to 4.8 GHz; frequency 6.3 GHz to 7.9 GHz; front-end; size 0.18 mum; ultra-wideband spectrum; voltage 1.8 V; Dual band; Gain; Impedance matching; Mixers; Receivers; Transfer functions; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE

Conference_Location

Toronto, ON

ISSN

1522-3965

Print_ISBN

978-1-4244-4967-5

Type

conf

DOI

10.1109/APS.2010.5561072

Filename

5561072