Modeling of thermocouple based wafer temperature measurement in a radiantly-heated chamber

Author

Yin, F. ; Gorodetsky, V. ; Kleyner, F. ; Garmer, C. ; Burke, J.

Author_Institution

Axcelis Technol. Inc, Rockville, MD, USA

fYear

2001

fDate

2001

Firstpage

173

Lastpage

178

Abstract

Using the Simulink^® software package, a non-linear dynamic model has been created to simulate the heat transfer and temperature control in a down-stream plasma asher with radiant wafer heating. The input thermal parameters of the components are measured from the real asher chamber. This model has successfully simulated the behaviors of lamp power and thermocouple. With its block structure, the model can be easily expanded or updated with more sophisticated thermal modules.

Keywords

heat transfer; integrated circuit measurement; process control; semiconductor process modelling; sputter etching; temperature control; temperature measurement; thermocouples; three-term control; PID controller; Simulink software package; block structure; down-stream plasma asher; heat transfer; input thermal parameters; lamp power; nonlinear dynamic model; radiant wafer heating; radiantly-heated chamber; temperature control; thermocouple based wafer temperature measurement modeling; Heat transfer; Lamps; Plasma applications; Plasma measurements; Plasma simulation; Plasma temperature; Semiconductor device modeling; Software packages; Temperature control; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001

Print_ISBN

0-9638251-0-4

Type

conf

DOI

10.1109/RTP.2001.1013763

Filename

1013763