DocumentCode
1873493
Title
Near IR and visible photoluminescence from Er doped III-nitride semiconductors
Author
Thaik, M. ; Seo, J.T. ; Hommerich, U. ; Abernathy, C.R. ; Pearton, S.J. ; MacKenzie, J.D. ; Wilson, R.G. ; Zavada, J.M.
Author_Institution
Dept. of Phys., Hampton Univ., VA, USA
fYear
1999
fDate
28-28 May 1999
Firstpage
422
Abstract
Summary form only given. We present new spectroscopic results from MOMBE grown Er doped GaN. An overview of the PL from GaN:Er/sapphire observed under below-gap (442 nm) pumping is given. The near infrared PL peaking at 1.54 /spl mu/m is assigned to the intra-4f-subshell Er transition /sup 4/I/sub 13/2//spl rarr//sup 4/I/sub 15/2/. The red emission line at 668 nm is attributed to the Er/sup 3+/ transition /sup 4/F/sub 9/2//spl rarr//sup 4/I/sub 15/2/.
Keywords
III-V semiconductors; erbium; gallium compounds; photoluminescence; semiconductor epitaxial layers; wide band gap semiconductors; Al/sub 2/O/sub 3/; GaN:Er; MOMBE; below-gap pumping; intra-4f-subshell Er transition; near IR photoluminescence; red emission line; visible photoluminescence; Doping profiles; Electroluminescent devices; Erbium; Gallium nitride; Molecular beam epitaxial growth; Photoluminescence; Photonic band gap; Physics; Semiconductor materials; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-595-1
Type
conf
DOI
10.1109/CLEO.1999.834395
Filename
834395
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