Comparative study on implant anneal using single wafer furnace and lamp-based rapid thermal processor

Author

Yoo, Woo Sik ; Fukada, Takashi ; Setokubo, Tsuyoshi ; Aizawa, Kazuo ; Ohsawa, Toshinori ; Takahashi, Nobuaki ; Komatubara, Ryuichi

Author_Institution

WaferMasters Inc., San Jose, CA, USA

fYear

2001

fDate

2001

Firstpage

240

Lastpage

245

Abstract

Comparative stud on rapid thermal annealing (RTA) of various implant species (¹¹B⁺, ⁴⁹BF₂⁺, ³¹P⁺ and ⁷⁵As⁺) in 200mm diameter Si wafers was done using a single wafer furnace (SWF) system and a lamp-based RTP system under 1 atm N₂ atmosphere. Average sheet resistance and its uniformity were measured after annealing under various conditions. Production worthy process windows for SWF and lamp-based conventional RTA systems are also compared. Lower average sheet resistance and superior sheet resistance uniformity were achieved in wide process conditions using SWF system. Effect of annealing on dopant redistribution was investigated using secondary ion mass spectroscopy (SIMS). The validity of "spike anneal" was discussed based on electrical activation and dopant diffusion mechanisms in implanted Si wafers.

Keywords

diffusion; doping profiles; elemental semiconductors; furnaces; rapid thermal annealing; secondary ion mass spectroscopy; silicon; 1 atm; Si:As; Si:B; Si:BF₂; Si:P; average sheet resistance; dopant diffusion mechanisms; dopant redistribution; electrical activation; implant anneal; lamp-based rapid thermal processor; process conditions; production worthy process windows; rapid thermal annealing; secondary ion mass spectroscopy; single wafer furnace; spike anneal; Atmosphere; Atmospheric measurements; Electric resistance; Electrical resistance measurement; Furnaces; Implants; Mass spectroscopy; Production systems; Rapid thermal annealing; Rapid thermal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001

Print_ISBN

0-9638251-0-4

Type

conf

DOI

10.1109/RTP.2001.1013772

Filename

1013772