Effect of conductive filaments on the electron emission properties in cathodes

Author

Poa, C.H.P. ; Silva, S.R.P.

Author_Institution

Sch. of Electron. & Phys. Sci., Surrey Univ., Guildford, UK

fYear

2004

fDate

11-16 July 2004

Firstpage

76

Lastpage

77

Abstract

In this article, the modeling performed using Silvaco, Atlas device simulation was reported, where a new kind of enhancement mechanism within the FE process in hydrogenated amorphous silicon (a-Si:H) was proposed. This model is equally applicable to all disordered and nano-crystalline materials. In particular, internal field enhancement where a conductive region is embedded in an insulating matrix. The simulation setup consists of a 0.1 μm thick a-Si:H film on a highly doped silicon substrate and a vacuum gap of 0.5 μm for the unmodified control sample. The set-up also shows that a conductive filament of 10 nm diameter is incorporated into the bulk a-Si:H thin film.

Keywords

amorphous semiconductors; electron field emission; elemental semiconductors; hydrogen; semiconductor thin films; silicon; 0.1 micron; 10 nm; Atlas device simulation; Si; Si:H; cathodes; conductive filaments; disordered materials; electron emission properties; hydrogenated amorphous silicon; insulating matrix; internal field enhancement; nanocrystalline materials; silicon substrate; vacuum gap; Amorphous silicon; Cathodes; Conducting materials; Electron emission; Insulation; Iron; Nanostructured materials; Semiconductor films; Substrates; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1354906

Filename

1354906