DocumentCode
1874148
Title
Switching loss analysis of closed-loop gate drive
Author
Chen, Lihua ; Peng, Fang Z.
Author_Institution
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
fYear
2010
fDate
21-25 Feb. 2010
Firstpage
1119
Lastpage
1123
Abstract
In this work, the IGBT turn-on and turn-off waveforms are normalized in order to analyze the closed-loop gate drive switching losses. The relationships of energy losses and controlled switching speed, voltage overshoot, current overshoot are derived. Theoretical analysis results show good agreement with experimental results. The proposed analysis methodology and results can provide guidelines for the gate drive design in real applications.
Keywords
driver circuits; insulated gate bipolar transistors; switching convertors; closed-loop gate drive; current overshoot; insulated gate bipolar transistors; switching loss analysis; switching speed; voltage overshoot; Breakdown voltage; Circuit testing; Control systems; Drives; Energy loss; Guidelines; Insulated gate bipolar transistors; Power semiconductor switches; Switching loss; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location
Palm Springs, CA
ISSN
1048-2334
Print_ISBN
978-1-4244-4782-4
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2010.5433363
Filename
5433363
Link To Document