Electron field emission property of boron doping nano-crystalline diamond

Author

Lee, Y.C. ; Lin, S.J. ; Huang, J.H. ; Chia, C.T. ; Lin, I.N.

Author_Institution

Dept. of Mater Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2004

fDate

11-16 July 2004

Firstpage

126

Lastpage

127

Abstract

The effects of boron doping on the nucleation behavior and the characteristics of nano-crystalline diamond (NCD) films were investigated. NCD films were prepared by microwave plasma enhanced chemical vapor deposition and were grown on mirror-polished p-type Si(100) substrate by bias enhanced growth technique. The morphologies and bonding structures of the films were characterized by field emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray diffraction. The increase in proportion of sp²-bonded grain boundaries in finer grain NCD films is assumed to be the main modifying factor in the electron field emission of the film.

Keywords

Raman spectra; X-ray diffraction; atomic force microscopy; bonds (chemical); boron; crystal binding; crystal morphology; diamond; doping; electron field emission; grain boundaries; nanostructured materials; nucleation; plasma CVD; scanning electron microscopy; thin films; C:B; Raman spectroscopy; Si; X-ray diffraction; atomic force microscopy; bias enhanced growth technique; boron doping nanocrystalline diamond; electron field emission; field emission scanning electron microscopy; film bonding structures; film morphology; microwave plasma enhanced chemical vapor deposition; mirror-polished p-type Si (100) substrate; nucleation; sp²-bonded grain boundaries; Atomic force microscopy; Boron; Chemical vapor deposition; Doping; Electron emission; Microwave theory and techniques; Plasma chemistry; Plasma properties; Plasma x-ray sources; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1354932

Filename

1354932