Preparation and field emission properties of nanostructured CuO emitters

Author

Li, C.Y. ; Huang, J.X. ; Chen, Jun ; Deng, S.Z. ; Xu, N.S.

Author_Institution

State Key Lab. of Optoelectronic Mater. & Technol. & Guangdong Provice Key Lab. of Display Mater. & Technol., Zhongshan Univ., Guangzhou, China

fYear

2004

fDate

11-16 July 2004

Firstpage

128

Lastpage

129

Abstract

Field emission properties of semiconductor nanostructured CuO films synthesized by both solid-liquid and solid-gas reaction methods under different conditions have been studied and compared. The morphology and structure of the prepared nanostructures CuO films were characterized using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. Stable field emission at low field from CuO nanostructures has been obtained. The result indicates that nanostructured CuO could be a promising cold cathode material.

Keywords

X-ray diffraction; copper compounds; electron field emission; materials preparation; nanostructured materials; scanning electron microscopy; transmission electron microscopy; CuO; X-ray diffraction; cold cathode material; field emission properties; nanostructured CuO emitters; scanning electron microscopy; solid-gas reaction method; solid-liquid reaction method; transmission electron microscopy; Cathodes; Copper; Educational technology; Heating; Morphology; Nanostructured materials; Nanowires; Scanning electron microscopy; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1354933

Filename

1354933