Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests

Author

Bagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro ; Visconti, Angelo ; Chiavarone, L. ; Calabrese, M. ; Frost, C.D.

Author_Institution

Dept. of Inf. Eng., Univ. of Padova, Padua, Italy

fYear

2014

fDate

1-5 June 2014

Abstract

We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts are examined and mechanisms are discussed. A comparison with NAND Flash memories, with both multi-level and single-level cell architecture, is performed. In addition to prompt effects, retention of irradiated cells is analyzed for several months after irradiation. Thanks to tail distributions, we can assess possible rare events.

Keywords

NAND circuits; NOR circuits; flash memories; sensitivity; FG memories; NAND flash memories; NOR architecture; accelerated neutron beams; accelerated tests; floating gate memories; irradiated cells; multilevel cell architecture; sensitivity; single-level cell architecture; tail distributions; threshold voltage shifts; wide-energy spectrum neutrons; Computer architecture; Flash memories; Life estimation; Microprocessors; Neutrons; Radiation effects; Threshold voltage; Error Correction Codes; Floating-gate Cells; Neutrons; Soft Errors;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861094

Filename

6861094