High-speed pulsed-hysteresis-latch design for improved SER performance in 20 nm bulk CMOS process

A novel pulsed-latch design using hysteresis that operates similarly to an edge-triggered flip-flop with improved SER performance is presented. Design was implemented along with standard D-flip-flop (D-FF) and DICE flip-flop in a 20 nm CMOS process. Alpha and Neutron SER test results indicate ~26× and ~3× better SER hardness respectively for the pulsed-hysteresis-latch compared to D-FF. The design also benefits from a 25% higher speed and has a low area overhead of ~8% over the D-FF. A typical processor utilizing the pulsed-hysteresis-latch design can benefit from a ~5× overall SER reduction which is shown to be better than targeted DICE-FF based hardening, both in terms of SER reduction and performance penalty.