• DocumentCode
    1875817
  • Title

    Efficient 50-Gb/s silicon microring modulator based on forward-biased pin diodes

  • Author

    Baba, Toshihiko ; Akiyama, Soramichi ; Imai, Masayoshi ; Hirayama, Naoki ; Takahashi, Hiroki ; Noguchi, Y. ; Horikawa, Tsuyoshi ; Usuki, Tatsuya

  • Author_Institution
    Photonics Electron. Technol. Res. Assoc. (PETRA, Tsukuba, Japan
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    69
  • Lastpage
    70
  • Abstract
    We developed a pin-diode silicon microring modulator that used side-wall grating waveguides. Modulator exhibits 0.28- V·cm-VπL at 25 GHz in forward-biased operation mode. We achieved 50-Gb/s operation at a driving voltage of 1.96 volts-peak-to-peak (Vpp).
  • Keywords
    diffraction gratings; elemental semiconductors; integrated optics; integrated optoelectronics; micro-optics; optical modulation; optical waveguides; p-i-n diodes; silicon; Si; bit rate 50 Gbit/s; forward-biased pin diodes; frequency 25 GHz; side-wall grating waveguides; silicon microring modulator; Gratings; Optical ring resonators; Phase modulation; Phase shifters; Photonics; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644430
  • Filename
    6644430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1875817