DocumentCode
1876378
Title
Uniform characteristics of Si-wire waveguide devices fabricated on 300 mm SOI wafers by using ArF immersion lithography
Author
Tanushi, Yuichiro ; Kita, Toshihiro ; Toyama, Munehiro ; Seki, Morihiro ; Koshino, Keiji ; Yokoyama, Naoki ; Ohtsuka, Minoru ; Sugiyama, Akihiko ; Ishitsuka, Eiichi ; Sano, Tomomi ; Horikawa, Tsuyoshi ; Yamada, Hiroyoshi
Author_Institution
Dept. of Commun. Eng., Tohoku Univ., Sendai, Japan
fYear
2013
fDate
28-30 Aug. 2013
Firstpage
105
Lastpage
106
Abstract
We have investigated characteristics uniformity of Si-wire waveguide devices formed on 300 mm SOI wafers by using ArF immersion lithography process. Very low dispersion of group indices within wafers was confirmed from measurements of asymmetric Mach-Zhender interferometers.
Keywords
Mach-Zehnder interferometers; elemental semiconductors; immersion lithography; integrated optoelectronics; optical dispersion; optical fabrication; optical waveguides; silicon; silicon-on-insulator; ArF immersion lithography; SOI wafers; Si-Si; Si-wire waveguide devices; asymmetric Mach-Zhender interferometers; group indices; optical dispersion; size 300 mm; uniform characteristics; Indexes; Lithography; Optical waveguides; Photonics; Semiconductor device measurement; Silicon; Silicon-on-insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location
Seoul
ISSN
1949-2081
Print_ISBN
978-1-4673-5803-3
Type
conf
DOI
10.1109/Group4.2013.6644448
Filename
6644448
Link To Document