• DocumentCode
    1876383
  • Title

    A Universal Parameter for Silicon Anisotropic Etching Inalkaline Solutions

  • Author

    Cheng, D. ; Gosálvez, M.A. ; Shikida, M. ; Sato, Kiminori ; Sato, K.

  • Author_Institution
    Department of Micro-Nano Systems Engineering, Nagoya University, Japan
  • fYear
    2006
  • fDate
    2006
  • Firstpage
    318
  • Lastpage
    321
  • Abstract
    We propose a new explanation for the difference between the etching properties of potassium-hydroxide (KOH) and tetramethyl-ammonium-hydroxide (TMAH) by focusing on the volume fraction occupied by the corresponding cations, K+for KOH and TMA+(with molecular structure N(CH3)4+) for TMAH. We have found experimentally that the differences in the surface morphology of Si
  • Keywords
    Anisotropic magnetoresistance; Chemical technology; Hydrogen; Micromechanical devices; Rough surfaces; Silicon; Surface morphology; Surface roughness; Systems engineering and theory; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
  • Conference_Location
    Istanbul, Turkey
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-9475-5
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2006.1627800
  • Filename
    1627800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1876383