Pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates: growth, characterization, and field emission properties

Author

Cahay, M. ; Garre, K. ; Draviam, P. ; Boolchand, P. ; Fairchild, S. ; Jones, J. ; Wu, X. ; Poitras, D. ; Lockwood, D.J. ; Semet, V. ; Binh, Vu Thien

Author_Institution

Dept. of Electron. Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA

fYear

2004

fDate

11-16 July 2004

Firstpage

266

Lastpage

267

Abstract

The growth, characterization, and field emission properties of pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates were studied. X-ray diffraction analysis of fairly thick films (micrometer size) reveals the successful growth of the cubic rocksalt structure with a lattice constant of 5.863(7) angstroms, which is close to the bulk value. High resolution transmission electron microscope images of the films reveal that they are comprised of nanocrystals separated by regions of amorphous materials. Raman spectra and ellipsometry measurements were also performed. It was found that the work function deduced from Fowler-Nordheim plots at room temperature has a mean value of 0.65 eV. Also, a strong dependence of the field emission current with temperature was observed.

Keywords

Raman spectra; X-ray diffraction; ellipsometry; field emission; lanthanum compounds; lattice constants; pulsed laser deposition; thin films; transmission electron microscopy; work function; Fowler-Nordheim plots; LaS; Raman spectra; X-ray diffraction; amorphous materials; cubic rocksalt structure; ellipsometry measurements; field emission current; lattice constant; nanocrystals; pulsed laser deposition; room temperature; thin film characterization; thin film field emission properties; thin film growth; transmission electron microscope; work function; Indium phosphide; Lanthanum; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; X-ray diffraction; X-ray imaging; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1355008

Filename

1355008