DocumentCode
1876745
Title
Epitaxial growth technology for optical interconnect based on bulk-Si platform
Author
JoongHan Shin ; BongJin Kuh ; JongSung Lim ; BeomSeok Kim ; EunHa Lee ; Dongjae Shin ; Kwansik Cho ; BeomSuk Lee ; Kyoungho Ha ; HanMei Choi ; Gil-Heyun Choi ; HoKyu Kang ; EunSeung Jung
Author_Institution
Semicond. R&D Div., Samsung Electron. Co., Ltd., Hwasung, South Korea
fYear
2013
fDate
28-30 Aug. 2013
Firstpage
3
Lastpage
4
Abstract
This study reports two types of Si epitaxial growth techniques, SPE and LEG, used for bulk-Si based optical interconnect. Experiments show that the LEG technology enhances both crystalline quality and epitaxial growth length.
Keywords
elemental semiconductors; liquid phase epitaxial growth; optical interconnections; silicon; solid phase epitaxial growth; LEG technology; SPE technology; Si; bulk-Si platform; crystalline quality; epitaxial growth length; liquid phase epitaxy; optical interconnect; solid phase epitaxy; Couplers; Epitaxial growth; Optical fibers; Optical interconnections; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location
Seoul
ISSN
1949-2081
Print_ISBN
978-1-4673-5803-3
Type
conf
DOI
10.1109/Group4.2013.6644461
Filename
6644461
Link To Document