• DocumentCode
    187695
  • Title

    Using thermal cycle and temperature / voltage testing to reduce the incidence of resistive / open reliability defects

  • Author

    Swift, Ann

  • Author_Institution
    IBM Microelectron., Essex Junction, VT, USA
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    Continued scaling of CMOS technologies has challenged the capability of “traditional” reliability defect screens. The increases in power due to scaling has diminished the effectiveness and increased the cost of performing accelerated voltage based screens such as Burn-in. In addition, the smaller geometries in the Back End Of Line (BEOL) has meant more susceptibility to opens/resistive mechanisms which have not been screened well by “traditional” voltage based screens. Through experimentation, it was determined that the use of thermal cycle and temperature/voltage corner testing significantly diminished the magnitude of opens/resistive mechanisms and also afforded some screening of “traditional” “shorting” mechanisms.
  • Keywords
    CMOS integrated circuits; crystal defects; integrated circuit reliability; integrated circuit testing; BEOL; CMOS technologies; accelerated voltage based screens; back end of line; opens-resistive mechanisms; reliability defect screens; temperature-voltage corner testing; thermal cycle; traditional shorting mechanisms; Acceleration; Mathematical model; Reliability; Stress; Testing; Thermal resistance; Thermal stresses; defect screening; reliablity; thermal cycle;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6861169
  • Filename
    6861169