Adual Axis Gas Gyroscope Based on Convective and Thermo-Resistive Effects in Silicon with Low Thermal-Induced Stress Sensing Element

This paper presents the design, simulation and fabrication of a dual axis semiconductor gas gyroscope. The sensor configuration consists of a piezoelectric pump and a micro thermal sensing element, packaged in an aluminum case with diameter and length of 14mm and 25mm, respectively. Novel structures of the sensing element and of the nozzle orifice are presented. The sensor has been fabricated and characterized. The measured sensitivities of the gyroscope for the X- and Y-axis were 0.082mV/deg/sec and 0.078mV/deg/sec, respectively. The cross-sensitivities between the two input axes were less than 0.26%. Non-linearity was measured to be smaller than 0.5% F.S. The resolution was measured to be 0.5deg/sec.