DocumentCode
1878203
Title
Integration of millisecond and spike anneals for dopant activation optimization
Author
Shiyu Sun ; Sharma, Shantanu ; Rao, K.V. ; Ng, Bryan ; Kouzminov, D. ; Colombeau, B. ; Variam, N. ; Muthukrishnan, S. ; Mayur, A. ; Brand, A.
Author_Institution
SSG CTO Office, Appl. Mater. Inc., Sunnyvale, CA, USA
fYear
2013
fDate
6-7 June 2013
Firstpage
88
Lastpage
90
Abstract
The effects of anneal sequences (ms anneal followed by spike anneal vs. spike anneal followed by ms anneal) were explored. Substantial anneal sequence effects on dopant activation were also reported.
Keywords
annealing; doping profiles; optimisation; secondary ion mass spectra; SIMS; dopant activation optimization; millisecond anneal; spike anneal; substantial anneal sequence effects; Annealing; Conferences; Implants; Junctions; Silicon; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2013 13th International Workshop on
Conference_Location
Kyoto
Print_ISBN
978-1-4799-0578-2
Type
conf
DOI
10.1109/IWJT.2013.6644512
Filename
6644512
Link To Document