1.55 /spl mu/m room temperature electrically pumped operation of fully lattice-matched Sb-based vertical cavity surface emitting lasers

Author

Almuneau, G. ; Hall, E. ; Kim, J. ; Sjolund, O. ; Kroemer, H. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1999

fDate

28-28 May 1999

Abstract

We have demonstrated electrically pumped operation at 1.55 /spl mu/m at room temperature of vertical-cavity lasers (VCLs) grown lattice-matched on InP. The VCLs present threshold currents lower than 10 mA. Powers around 10 mW and external quantum efficiencies of 38.3% have been measured.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser mirrors; laser transitions; semiconductor lasers; substrates; surface emitting lasers; 1.55 mum; 10 mW; 38.3 percent; AlGaAsSb-AlAsSb; AlGaAsSb/AlAsSb Bragg mirrors; InP; InP substrate; external quantum efficiencies; fully lattice-matched Sb-based vertical cavity surface emitting lasers; powers; room temperature electrically pumped operation; threshold currents; Density measurement; Indium phosphide; Lattices; Mirrors; Optical losses; Optical pumping; Reflectivity; Substrates; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834617

Filename

834617