Parameter extraction technique for the small-signal equivalent circuit model of microwave silicon MOSFETs

The MOSFET equivalent circuit model parameters are determined by performing the refined extraction method using Z-parameter formulations for parasitics and Y-parameter ones for geometric layout, excellent correspondence is observed between measured and fitted data of Z-parameter equations and the extracted intrinsic parameters exhibit mostly frequency-independent behavior. The scaling rule to gate width is observed to be applied for the extracted intrinsic parameters within reasonable errors. These extraction results essentially demonstrate the validity of this method in the wide range of gate bias and layout