Implementation and operational investigations of bipolar gate drivers

This paper deals with the investigation of simple implementation and design of bipolar gate driver for high side power transistor control. Bipolar gate signals are usually preferred for high switching dynamic control and power device shielding. Nevertheless, bipolar supplies are harder to implement and rely on numerous components that may result in significant reduction of overall converter robustness. An alternative solution is to use unipolar supplies which are more complex but integrable with specific gate driver circuits. The addition of resonant structure gives the possibilities for involving the efficiency of the gate driver and reducing further gate driver supply requirements. The paper presents theses issues based on several gate drivers and their supplies.