SPICE DC parameter extraction of MESFETs with diffused and grown channel

Author

Lujan, Alexandre S. ; Chueiri, Ivan ; Swart, Jacobus W. ; Prince, Franclsco C. ; Tessari, P.H.

Author_Institution

UNICAMP, State Univ. of Campinas, Sao Paulo, Brazil

fYear

1993

fDate

22-25 Mar 1993

Firstpage

163

Lastpage

166

Abstract

A procedure for extracting SPICE (simulation program with IC emphasis) DC parameters of GaAs MESFETs is presented. The program developed produces a best fitting of the calculated I-V curves to the experimental characteristics. Devices are fabricated by means of two different processes producing different channel doping structures and different channel length devices. Extracted parameters of these devices are presented and analyzed

Keywords

III-V semiconductors; SPICE; Schottky gate field effect transistors; digital simulation; doping profiles; semiconductor device models; DC parameter extraction; GaAs; I-V curves; MESFETs; SPICE; channel doping structures; channel length devices; diffused channel; Current measurement; Data mining; Electrical resistance measurement; Fitting; Linear regression; MESFETs; Parameter extraction; SPICE; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Conference_Location

Sitges

Print_ISBN

0-7803-0857-3

Type

conf

DOI

10.1109/ICMTS.1993.292927

Filename

292927

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1882401