The modified Schiffman phase shifter

Author

Gorbachev, Anatoly P. ; Churkin, Vadim S. ; Vasilenko, Artem A.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2010

fDate

22-24 Sept. 2010

Firstpage

124

Lastpage

126

Abstract

This paper presents the modified 90-degree Schiffman phase shifter (phaser). The new phaser is based on the reentrant structure with unequal dielectric constants of the interior and exterior microstrip substrates. The general TEM circuit model for the proposed phaser in terms of a series connection of the two-ports is presented and then used to determine its electrical parameters. As a result, the modified Schiffman phaser (SP) has a good performance over almost octave frequency range and compact multilayer architecture, showing promising potential for a variety of applications.

Keywords

equivalent circuits; permittivity; phase shifters; transmission electron microscopy; TEM circuit model; compact multilayer architecture; dielectric constants; electrical parameters; exterior microstrip substrate; interior microstrip substrate; modified 90-degree Schiffman phase shifter; Helium; Linear matrix inequalities; Microwave FET integrated circuits; Microwave integrated circuits; Microwave theory and techniques; Symmetric matrices; Zinc; Phase shifter; Schiffman phaser; multilayer implementation; reentrant structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electronic Instrument Engineering (APEIE), 2010 10th International Scientific-Technical Conference on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4244-8209-2

Electronic_ISBN

978-1-4244-8210-8

Type

conf

DOI

10.1109/APEIE.2010.5677307

Filename

5677307