Amorphous wire and CMOS IC based sensitive micro-magnetic sensors utilizing magneto-impedance (MI) and stress-impedance (SI) effects and applications

Author

Mohri, K. ; Uchiyama, T. ; Shen, L.P. ; Cai, C.M. ; Honkura, Y. ; Aoyama, H.

Author_Institution

Dept. of Electr. Eng., Nagoya Univ., Japan

fYear

2001

fDate

2001

Firstpage

25

Lastpage

34

Abstract

Sensitive, quick response and low power consumption micro-magnetic sensors have been developed utilizing the magneto-impedance (MI) and stress-impedance (SI) effects in zero-magnetostrictive (zero-λ) and negative-magnetostrictive amorphous wires connected with CMOSFET IC sensor circuits. The MI magnetic field sensor using zero-λ amorphous wires of 30 μm diameter and 2 mm length represents the resolution of about 1 μG for AC fields and about 100 μG for the DC field with ±3 G in the full scale, the cut-off frequency of about 1 MHz, and low power consumption of about 10 mW for the CMOS MI sensor. The SI sensor using a 20 μm diameter negative-λ amorphous wire shows the gauge factor of about 4000 for stress (strain) sensors and the resolution of 0.1 Gal for acceleration sensors. The principles, basic features, and applications of MI and SI sensors are summarized

Keywords

CMOS integrated circuits; magnetic sensors; microsensors; 1 MHz; 10 mW; 20 micron; acceleration sensor; amorphous wire; magnetic sensor; magneto-impedance effect; microsensor; stress-impedance effect; Amorphous magnetic materials; Amorphous materials; CMOS integrated circuits; CMOSFETs; Cutoff frequency; Energy consumption; Magnetic circuits; Magnetic sensors; Stress; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Micromechatronics and Human Science, 2001. MHS 2001. Proceedings of 2001 International Symposium on

Conference_Location

Nagoya

Print_ISBN

0-7803-7190-9

Type

conf

DOI

10.1109/MHS.2001.965217

Filename

965217