• DocumentCode
    1883743
  • Title

    Ultrafast plasmon enhanced electron emission and novel scaling laws for space-charge-limited current

  • Author

    Yingbin Zhu ; Ang, L.K.

  • Author_Institution
    SUTD-MIT Int. Design Center, Singapore Univ. of Technol. & Design, Singapore, Singapore
  • fYear
    2015
  • fDate
    13-17 July 2015
  • Firstpage
    10
  • Lastpage
    11
  • Abstract
    In this paper, we report our recent works on modeling of ultrafast laser induce electron emission from a sharp tip and recent progress about space-charge-limited (SCL) current. We first study the pulse shape effect on electron emission by solving the time dependent Schrödinger equation. Carrier envelope phase effect is analyzed. Later we develop a single electron model to study the space charge (SC) effect in vacuum diode. The Coulomb blockage effect and THz frequencies transport behavior are found. A multidimensional model is used to study the SC effect on electron emission from a tip. We conclude several novel scaling for SCL current. For the last part, we present our experiment results about electron injection into two layer structure. Improvement on resistive switching compared with one layer structure is observed.
  • Keywords
    Coulomb blockade; Schrodinger equation; diodes; electron field emission; space-charge limited devices; space-charge-limited conduction; surface plasmons; Coulomb blockage effect; THz frequency transport behavior; carrier envelope phase effect; electron injection; layer structure; multidimensional model; pulse shape effect; resistive switching; scaling laws; single electron model; space-charge-limited current; time dependent Schrodinger equation; ultrafast laser induce electron emission; ultrafast plasmon enhanced electron emission; vacuum diode; Current density; Electron emission; Mathematical model; Plasmons; Shape; Space charge; Trajectory; plasmonic; space charge limited current; tip emitter; transport; ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
  • Conference_Location
    Guangzhou
  • Print_ISBN
    978-1-4673-9356-0
  • Type

    conf

  • DOI
    10.1109/IVNC.2015.7225370
  • Filename
    7225370