DocumentCode
1883794
Title
Electrostatic modelling of an in-plane gated CNT based cathode
Author
Sabaut, Lucie ; Ponard, Pascal ; Mazellier, Jean-Paul ; Legagneux, Pierre
Author_Institution
Thales Electron Devices, Thonon, France
fYear
2015
fDate
13-17 July 2015
Firstpage
14
Lastpage
15
Abstract
The case of an in-plane gated CNT emitter integrated in a planar diode configuration was investigated. An electrostatic model was proposed, which resulted in an analytical expression of the field at the apex of the CNT. Simulations validated this model and confirmed that the electrostatic influence of the bias electrode only depends on its radius and CNT height. The proximity of the gate as compared to the emitter apex enables low bias voltage to modulate the current with high susceptibility.
Keywords
carbon nanotubes; cathodes; diodes; electron emission; electrostatics; vacuum microelectronics; bias electrode; electrostatic model; in-plane gated CNT based cathode; planar diode; Analytical models; Carbon nanotubes; Electric fields; Electric potential; Electrodes; Electrostatics; Logic gates; carbon nanotube; field emission; modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2015 28th International
Conference_Location
Guangzhou
Print_ISBN
978-1-4673-9356-0
Type
conf
DOI
10.1109/IVNC.2015.7225372
Filename
7225372
Link To Document