DocumentCode
1883830
Title
Prediction of PIN diode reverse recovery
Author
Wang, Yueqing ; Zhang, Qingyou ; Ying, Jianping ; Sun, Chacqun
Author_Institution
Delta Power Electron. Center, Shanghai, China
Volume
4
fYear
2004
fDate
2004
Firstpage
2956
Abstract
Generally, the reverse recovery issue of diode is difficult to deal with, which causes large added loss and EMI. Different down slopes for diode reverse voltage mean different working conditions, and this paper shows you the general concept with different down slopes and how to predict the reverse recovery current to calculate the relative switching loss. The empirical equations are deduced based on physical concepts and verified by lab measurements.
Keywords
electromagnetic interference; p-i-n diodes; EMI; PIN diode reverse recovery; empirical equation; reverse recovery current; switching loss; Circuits; Electronics industry; Equations; Frequency; P-i-n diodes; Power electronics; Power supplies; Sun; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN
0275-9306
Print_ISBN
0-7803-8399-0
Type
conf
DOI
10.1109/PESC.2004.1355304
Filename
1355304
Link To Document