A 13.1% tuning range 115GHz frequency generator based on an injection-locked frequency doubler in 65nm CMOS

Author

Mazzanti, Andrea ; Monaco, E. ; Pozzoni, M. ; Svelto, Francesco

Author_Institution

Univ. of Modena & Reggio Emilia, Modena, Italy

fYear

2010

fDate

7-11 Feb. 2010

Firstpage

422

Lastpage

423

Abstract

A CMOS frequency multiplier is based on a Pierce oscillator injection-locked by a push-push pair. Compared to traditional stand-alone push-push multipliers driving a selective load, this solution provides a differential output and a larger voltage swing. When driven by a half-frequency VCO, prototypes in 65 nm CMOS demonstrate a 13.1% tuning range at 115 GHz with a phase noise of -107 dBc/Hz @ 10 MHz offset for a total power dissipation of 12 mW.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; frequency multipliers; injection locked oscillators; low-power electronics; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS frequency multiplier; frequency 115 GHz; frequency generator; half-frequency VCO; injection-locked Pierce oscillator; injection-locked frequency doubler; phase noise; power 12 mW; power dissipation; size 65 nm; stand-alone push-push multipliers; CMOS technology; Capacitors; Circuits; Frequency; Injection-locked oscillators; Phase noise; Semiconductor device measurement; Tuning; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-4244-6033-5

Type

conf

DOI

10.1109/ISSCC.2010.5433869

Filename

5433869