Monte Carlo study of electron transport in AlSb/InAs HEMT structures

A Monte Carlo model of in-plane electron transport in InAs/AlSb heterostructures is presented. Special attention has been paid to the effects of nonparabolicity, which are crucial for such a narrow gap system. Electron states are obtained from a Ben Daniel-Duke equation with energy-dependent effective mass. The effect of band mixing on scattering rates is included, at an approximate level, through the use of a "Bloch overlap factor". It has been shown that neglecting this factor leads to a strong underestimation of electron mobility, whereas our model gives realistic values. We have studied a standard single well structure and a more sophisticated double well structure. In the latter case, the electron transfer between the two coupled wells has been discussed.