• DocumentCode
    1885127
  • Title

    High speed diamond DUV-detector

  • Author

    Gluche, P. ; Kohn, O. ; Binder, M. ; Adamschik, M. ; Ebert, W. ; Vescan, A. ; Rohrer, E. ; Nebel, C.E. ; Kohn, E.

  • Author_Institution
    Dept. of Electron Devices & Circuits, Ulm Univ., Germany
  • fYear
    1997
  • fDate
    4-6 Aug 1997
  • Firstpage
    314
  • Lastpage
    321
  • Abstract
    Two material systems compete for detector applications in the DUV range, namely GaN and diamond. Whereas GaN with a direct bandgap is intensively studied for light emitting structures, diamond with an indirect bandgap has a long background as particle and X-ray detector. In this study, a diamond DUV-detector based on a MSM structure has been fabricated and characterized. Efficiency, speed and blindness to visible light have been investigated. A charge collection efficiency of approx. 100% at high electric field strength and an ultra fast response (FWHM <4 ns) could be demonstrated
  • Keywords
    diamond; high-speed optical techniques; metal-semiconductor-metal structures; ultraviolet detectors; 4 ns; C; MSM structure; charge collection efficiency; high speed diamond DUV detector; indirect bandgap; Diamond;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1997. Proceedings., 1997 IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • ISSN
    1079-4700
  • Print_ISBN
    0-7803-3970-3
  • Type

    conf

  • DOI
    10.1109/CORNEL.1997.649372
  • Filename
    649372