DocumentCode
1885353
Title
Session 24 overview: DRAM & Flash memories
Author
Takeuchi, Ken ; Lu, Nicky C.C.
Author_Institution
University of Tokyo, Japan
fYear
2010
fDate
7-11 Feb. 2010
Abstract
This session combines DRAM and NAND Flash memory, which are the two work-horses of the memory industry. Some of the exciting advances that have allowed the adoption of these memory technologies in a variety of consumer electronics are revealed in this session. More and more of these systems are using both DRAM and NAND in their memory sub-systems and in many cases require close coordination between the interface designs of the two memory types.
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-4244-6033-5
Type
conf
DOI
10.1109/ISSCC.2010.5433881
Filename
5433881
Link To Document