DocumentCode
1885376
Title
Epitaxially thin InP Schottky diodes for micromachined polymer membrane-on-silicon coplanar waveguides
Author
Avramescu, Viorel ; Hjort, Klas
Author_Institution
IMT, Bucharest, Romania
fYear
2002
fDate
2002
Firstpage
209
Lastpage
211
Abstract
A new method has been developed to integrate III-V electronic devices into a coplanar waveguide silicon technology. InP dices with an ohmic contact and metal conductor layer are glued to a BCB polymer layer on silicon by using a not fully cured resist and applying pick-´n´-place positioning. An etch stop technique is used to obtain. the epilayer diodes (less than 2 μm thick). The Schottky contact is realised with Cr-Au through BCB patterning.
Keywords
III-V semiconductors; Schottky barriers; Schottky diodes; coplanar waveguides; indium compounds; microwave circuits; microwave diodes; ohmic contacts; semiconductor epitaxial layers; 2 micron; BCB patterning; InP; Schottky contact; coplanar waveguide silicon technology; epitaxially thin Schottky diodes; etch stop technique; metal conductor layer; micromachined polymer membrane-on-silicon coplanar waveguides; ohmic contact; pick-´n´-place positioning; Conductors; Coplanar waveguides; Etching; III-V semiconductor materials; Indium phosphide; Ohmic contacts; Polymers; Resists; Schottky diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014316
Filename
1014316
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