DocumentCode
1885910
Title
Power consumption analysis in static CMOS gates
Author
Wiltgen, Alberto ; Escobar, Kim A. ; Reis, Andre I. ; Ribas, Renato P.
Author_Institution
Inst. of Inf., Fed. Univ. of Rio Grande do Sul - UFRGS, Porto Alegre, Brazil
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
6
Abstract
This paper addresses the power consumption in CMOS logic gates through a study that considers the transistor network arrangement and the advance of the technology node. The relationship between charge/discharge and short-circuit dynamic power components are investigated through electrical simulations (SPICE). The static power dissipation is also analyzed. Experimental results demonstrate that dynamic power still remains the main source of consumption in standard cell designs, although the short-circuit component seems to decrease at the advancing of CMOS fabrication processes. The static power, on the other hand, keeps growing at each new technology node, becoming even more a critical challenge in VLSI design.
Keywords
CMOS digital integrated circuits; VLSI; integrated circuit design; logic gates; CMOS fabrication processes; CMOS logic gates; SPICE; VLSI design; electrical simulations; power consumption analysis; short-circuit dynamic power components; standard cell designs; static CMOS gates; static power dissipation; transistor network arrangement; Capacitance; Discharges (electric); Inverters; Logic gates; Power demand; Power dissipation; Transistors; CMOS; Digital circuit; logic gate; power dissipation; short-circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits and Systems Design (SBCCI), 2013 26th Symposium on
Conference_Location
Curitiba
Type
conf
DOI
10.1109/SBCCI.2013.6644863
Filename
6644863
Link To Document