Hydrogen interactions with SIMOX

Author

Myers, S.M. ; Stein, H.J.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

fYear

1991

fDate

1-3 Oct 1991

Firstpage

14

Lastpage

15

Abstract

Nuclear-reaction profiling was used to examine the reactions of H ₂ with SIMOX (separation by implanted oxygen) structures in the temperature range 500-1000°C, and strong H binding within the buried SiO₂ layer was observed. These trapping reactions are significant both for their potentially beneficial passivation of electrically active centers and for the indication they provide of defect densities. In separation studies of H in thermal oxides on Si, the authors have quantitatively characterized the interactions of H with Si and O dangling bonds in the SiO₂ matrix and at the Si-SiO ₂ interface, thereby providing a prediction capability that is believed applicable to SIMOX

Keywords

chemical analysis by nuclear reactions and scattering; dangling bonds; electron traps; impurity distribution; ion implantation; passivation; semiconductor-insulator boundaries; 500 to 1000 degC; H binding; SIMOX; Si-SiO₂ interface; SiO₂:H-Si; buried SiO₂ layer; dangling bonds; defect densities; nuclear reaction profiling; passivation; trapping reactions; Annealing; Hydrogen; Infrared spectra; Isothermal processes; Laboratories; Paramagnetic resonance; Passivation; Permeability; Temperature control; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1991. Proceedings, 1991., IEEE International

Conference_Location

Vail Valley, CO

Print_ISBN

0-7803-0184-6

Type

conf

DOI

10.1109/SOI.1991.162833

Filename

162833