High dynamic range CMOS filter

Author

Qureshi, M.S. ; Allen, P.E.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2005

fDate

18-20 May 2005

Firstpage

14

Abstract

Summary form only given. Implementation of high dynamic range on-chip 70 MHz gm-C (transconductor-capacitor) filter for a UMTS (WCDMA) superheterodyne receiver is described. The filter is designed in National Semiconductor´s 0.18 micron standard CMOS process. Chebyshev approximation is used to implement a 6th order filter in active gm-C. Positive feedback is used to realize a large quality factor (Q). This filter provides blocker attenuation with dynamic range (DR) of 42 dB and with power consumption of 21.78 mW.

Keywords

3G mobile communication; CMOS analogue integrated circuits; Chebyshev approximation; Q-factor; VHF filters; circuit feedback; code division multiple access; integrated circuit design; power consumption; superheterodyne receivers; 0.18 micron; 21.78 mW; 70 MHz; CMOS filter; Chebyshev approximation; Q-factor; UMTS; WCDMA; blocker attenuation; high dynamic range CMOS filter; high dynamic range filter; positive feedback; power consumption; quality factor; superheterodyne receiver; transconductor-capacitor filter; 3G mobile communication; Active filters; Attenuation; CMOS process; Chebyshev approximation; Dynamic range; Energy consumption; Feedback; Multiaccess communication; Q factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Nonlinear Signal and Image Processing, 2005. NSIP 2005. Abstracts. IEEE-Eurasip

Conference_Location

Sapporo

Print_ISBN

0-7803-9064-4

Type

conf

DOI

10.1109/NSIP.2005.1502233

Filename

1502233